A single-barrier GaAs/AlAs/GaAs heterostructure, with self-assembled In-based quantum dots incorporated in the AlAs tunnel barrier, exhibits a series of resonant peaks in the low temperature current-voltage characteristics. We argue that each peak arises from singleelectron tunneling through the dis
Coulomb blockade in resonant magnetotunneling through rectangular quantum dots
β Scribed by J.J. Palacios; L. Martin-Moreno; C. Tejedor
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 383 KB
- Volume
- 189
- Category
- Article
- ISSN
- 0921-4526
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π SIMILAR VOLUMES
We describe recent measurements of the statistics and parametric correlations of Coulomb blockade peak heights in shape-deformable GaAs/Al x Ga 1-x As quantum dots. We find good agreement between the measured distributions of peak heights and probability distributions predicted by random matrix theo
We have studied conductance oscillations of a quantum dot by varying the gate potential of one of the gate pairs, that forms the quantum dot, while the other pair was kept at a constant potential. The potential was varied from pinch-off to a level where two or more transverse modes were transmitted