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Coulomb blockade in a silicon-on-sapphire nanowire

✍ Scribed by D. Dovinos; D.G. Hasko; Z. Helin

Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
480 KB
Volume
53
Category
Article
ISSN
0167-9317

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✦ Synopsis

The use of single electron devices as photon detectors, in the infrared wavelength range, is explored. The operating mechanism uses photon assisted tunneling so that the device current in a single electron transistor (SET) with a bias voltage of less than the Coulomb gap voltage depends on the rate of interaction with the photons. Coupling between the photons and the SET requires the use of a planar antenna structure so that the greatest response is from the substrate side. The use of an IR transparent substrate, such as sapphire, is important to maximise the detection sensitivity. The fabrication and electrical behaviour of SETs made using silicon-onsapphire is described and the detection performance is predicted.

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