Today single-electron devices are believed to be among the top candidates to replace standard complementary metal oxide silicon field effect transistor technology at the end of the conventional semiconductor roadmap. In this review, we present a brief survey of different realizations of single-elect
Coulomb blockade in a nanoscale phosphorus-in-silicon island
β Scribed by F.E. Hudson; A.J. Ferguson; C. Yang; D.N. Jamieson; A.S. Dzurak; R.G. Clark
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 279 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
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