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Coulomb-anomaly of the Hall-effect in thin disordered Au-films

✍ Scribed by G. Bergmann


Publisher
Elsevier Science
Year
1984
Tongue
English
Weight
240 KB
Volume
49
Category
Article
ISSN
0038-1098

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Disorder Effects on the Gap of Thin Si N
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The gap of Si nanocrystalline films has been computed using a non-orthogonal tight-binding approach. We have studied the influence of different types of disorder: inter-grain distance, intergrain misorientation, and film roughness on the gap value of these Si films. In all the cases, the variation o