Spin transitions and correlated few-electron states are investigated by resonant inelastic light scattering in dilute arrays of GaAs/ AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching. We focus on QDs with four electrons. We show t
Correlations effects in few-electron quantum dots between ν=2 and 1
✍ Scribed by C Gould; P Hawrylak; A Sachrajda; Y Feng; P Zawadzki; Z Wasilewski
- Publisher
- Elsevier Science
- Year
- 2000
- Tongue
- English
- Weight
- 335 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1386-9477
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