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Correlations between the thermoelectric power and Hall effect of Sn or Ge doped In2O3 semiconductors

โœ Scribed by G. Campet; S.D. Han; S.J. Wen; M.C.R. Shastry; B. Chaminade; E. Marquestaut; J. Portier; P. Dordor

Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
421 KB
Volume
22
Category
Article
ISSN
0921-5107

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The electronic properties of In203 (IO) and Sn-doped In203 (ITO) ceramics doped with Ti 4รท, Zr 4รท or Ge 4รท are investigated. The choice of the doping elements arises from their high value of the "Lewis acid strength". Related to that, it has been shown that the doping of IO or ITO ceramics with Zr 4