Depth profiles of photoluminescence (PL) and Raman scattering properties of anodized porous Si have been studied by micro-measurement techniques. The depthstructural-inhomogeneity strongly affects the optical properties of porous Si. The Si 2p absorption edge of porous Si has been examined with sync
β¦ LIBER β¦
Correlation of Raman and photoluminescence spectra of porous silicon
β Scribed by Tsu, R.; Shen, H.; Dutta, M.
- Book ID
- 120490353
- Publisher
- American Institute of Physics
- Year
- 1992
- Tongue
- English
- Weight
- 527 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.107364
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