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Correlation of carbon incorporation from TEG and effective V/III ratio on the surface in MOMBE grown GaAs

✍ Scribed by M. Kamp; G. Mörsch; M. Weyers; H. Lüth

Book ID
107790775
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
127 KB
Volume
107
Category
Article
ISSN
0022-0248

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✍ O. Takahashi; T. Nakayama; R. Souda; F. Hasegawa 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB 👁 2 views

In order to investigate the influence of the substrate polarity and growth conditions on the polarity, GaN was grown on GaAs (111)A-Ga and B-As surfaces with different V/III ratios by metalorganic molecular beam epitaxy (MOMBE). It was found that for GaN grown on GaAs (111)A-Ga surface polarity was