Correlated Variable Range Hopping in Doped GaAs, CdTe, Ge and Si
β Scribed by R. Rentzsch; A.N. Ionov
- Publisher
- John Wiley and Sons
- Year
- 2002
- Tongue
- English
- Weight
- 107 KB
- Volume
- 230
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
The low-temperature electrical conductivity sT of uncompensated insulating Si:P with P concentration N just below the metalΒ±insulator transition (MIT), i.e. 3X0 Γ 10 18 cm Γ3 $ N $ 3X5 Γ 10 18 cm Γ3 , was measured between 0.05 and 5 K. With decreasing N, sT shows a crossover from Mott variable-range
Isotopic mixtures of 70 Ge and 74 Ge (Isotopically Engineered: IE-Ge) were by a neutron-transmutation doping (NTD) process provided with a high compensation of K = N As /N Ga ffi 0.4, 0.6, 0.9. Variable range hopping (vrh) resistivity at T = 0.1-4.2 K shows r(T) = r 0 exp(T 0 /T) 1/2 . At K = 0.4-0.