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Corrections to “On the Suitability of a High- Gate Dielectric in Nanoscale FinFET CMOS Technology”

✍ Scribed by Agrawal, S.; Fossum, J. G.


Book ID
114619835
Publisher
IEEE
Year
2009
Tongue
English
Weight
36 KB
Volume
56
Category
Article
ISSN
0018-9383

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