Correction to “Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells”

✍ Scribed by Bomsoo Kim; Wook-Hyun Kwon; Chang-Ki Baek; Younghwan Son; Chan-Kwang Park; Kinam Kim; Kim, D.M.

• Book ID: 114618625
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 27 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.890466