Influence of In0.15Ga0.85As capping laye
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Mirja Richter; Dirk Reuter; Jean-Yves Duboz; Andreas D. Wieck
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Article
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2008
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Elsevier Science
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English
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Self-assembled InAs/(In,Ga)As quantum dots were embedded into n-or p-type Schottky diodes to investigate the conduction and valence band states, respectively. The samples were prepared by molecular beam epitaxy, and capacitance-voltage (C(V)) spectroscopy as well as photoluminescence (PL) measuremen