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Copper source/drain electrode contact resistance effects in amorphous indium–gallium–zinc-oxide thin film transistors

✍ Scribed by Woong-Sun Kim; Yeon-Keon Moon; Sih Lee; Byung-Woo Kang; Tae-Seok Kwon; Kyung-Taek Kim; Jong-Wan Park

No coin nor oath required. For personal study only.

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