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Controlled p- and n-type doping of homo- and heteroepitaxially grown InSb

✍ Scribed by Thompson, Philip E.; Davis, John L.; Yang, Ming-Jey; Simons, David S.; Chi, Peter H.

Book ID: 120539865
Publisher: American Institute of Physics
Year: 1993
Tongue: English
Weight: 861 KB
Volume: 74
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.355111

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## Abstract N‐type doping of GaN in hydride vapour phase epitaxy (HVPE) has been studied. While silane was found to be not suitable, doping from solid silicon was found to be feasible but difficult to handle. Dichlorosilane was found to be a convenient Si doping source for HVPE growth of GaN. High