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Controllable Remanent States on Microstructured Magnetic Tunnel Junction Rings

✍ Scribed by Chen, C.C.; Chao, C.T.; Kuo, C.Y.; Horng, L.; Teho Wu; Chern, G.; Huang, C.Y.; Isogami, S.; Tsunoda, M.; Takahashi, M.; Wu, J.C.


Book ID
114652196
Publisher
IEEE
Year
2007
Tongue
English
Weight
777 KB
Volume
43
Category
Article
ISSN
0018-9464

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Effect of Nb concentration on the micros
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## Abstract We have investigated the composition dependence of magnetic tunnel junctions (MTJs) with Nb‐alloyed Al‐oxide (NbAlO~x~) and analyzed the microstructure changes and electrical property of Nb alloyed Al‐oxide layer. After annealing, tunnel magnetoresistance (TMR) ratio of MTJ with Nb‐allo