We use the Ogg-McCombe Hamiltonian together with the Dresselhaus and Rashba spin-splitting terms to find the g factor of conduction electrons in GaAs-(Ga,Al)As semiconductor quantum wells (QWS) (either symmetric or asymmetric) under a magnetic field applied along the growth direction. The combined e
Control of spontaneous spin splitting in an asymmetric quantum well with the use of strain and/or magnetic field
✍ Scribed by U. Ekenberg; O. Mauritz
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 94 KB
- Volume
- 10
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
Spin-orbit coupling combined with inversion asymmetry gives rise to spin splitting even in the absence of an applied magnetic ÿeld. The size of this spin splitting can be controlled by changing the degree of asymmetry using a gate voltage. We present here other less obvious ways of controlling the spontaneous spin splitting in a two-dimensional hole gas, where these e ects are particularly large. Applying moderate stress can easily decrease the spin splitting by an order of magnitude. The mechanism is the strain-induced energy shift of the heavy-hole and light-hole subbands, which diminishes the degree of band mixing, which is found to be strongly correlated to the spin splitting. An applied magnetic ÿeld causes an additional Zeeman splitting, but we ÿnd that a magnetic ÿeld of 1 T can be su cient to practically erase the di erence between a symmetric quantum well (without subband splitting) and an asymmetric quantum well. We have simulated Shubnikov-de Haas oscillations and found that two periodicities in 1=B can occur even for one ÿlled spin-degenerate hole subband.
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