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Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs

✍ Scribed by G. Haacke; S.P. Watkins; H. Buckhard

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Detection and control of impurity incorp

✍ J.M. DePuydt; T.L. Smith; J.E. Potts; H. Cheng; S.K. Mohapatra 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 563 KB

Residual impurities originating from AsH

✍ S. Nagao; Y. Inoue; E. Kawanishi; H. Gotoh 📂 Article 📅 1991 🏛 Elsevier Science 🌐 English ⚖ 329 KB

Study of silicon incorporation from SiH4

✍ J.M. Redwing; H. Simka; K.F. Jensen; T.F. Kuech 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 548 KB

Residual impurities in high purity GaAs

✍ H. Morkoçc; L.F. Eastman; D. Woodard 📂 Article 📅 1980 🏛 Elsevier Science 🌐 English ⚖ 238 KB

The effect of controlled impurity incorp

✍ J.M. Redwing; S. Nayak; D.E. Savage; M.G. Lagally; D.F. Dawson-Elli; T.F. Kuech 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 634 KB

Effects of arsenic ambient controlled LE

✍ Shoichi Ozawa; Hiroo Miyairi; Junji Kobayashi; Tsuguo Fukuda 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 203 KB