Control of Heteroepitaxial Growth of CaCu3Ti4O12 Films on SrTiO3 Substrates by MOCVD

✍ Scribed by Maria Rita Catalano; Graziella Malandrino; Roberta G. Toro; Raffaella Lo Nigro

• Publisher: John Wiley and Sons
• Year: 2012
• Tongue: English
• Weight: 586 KB
• Volume: 18
• Category: Article
• ISSN: 0948-1907
• DOI: 10.1002/cvde.201106960

✦ Synopsis

Thin films of CaCu 3 Ti 4 O 12 (CCTO) are successfully deposited by metal-organic (MO)CVD on (001)SrTiO 3 substrates. An interesting approach, based on a molten multi-component precursor source, is applied. The molten mixture consists of the Ca(hfa) 2 tetraglyme, Ti(tmhd) 2 (O i Pr) 2 , and Cu(tmhd) 2 [Hhfa ¼ 1,1,1,5,5,5-hexafluoro-2,4-pentanedione; tetraglyme ¼ 2,5,8,11,14-pentaoxapentadecane; Htmhd ¼ 2,2,6,6-tetramethyl-3,5-heptandione; O i Pr ¼ iso-propoxide] precursors. It is also found that, in the present case of a relatively large lattice mismatch ($5%), the epitaxial growth can be achieved by a careful optimization of deposition parameters. Film structural and morphological characterization is carried out using several techniques; X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). A complete comparison between films deposited by two main processes is carried out in order to understand the kinetic and thermodynamic issues involved in the MOCVD epitaxial growth.