๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Containerless solidification of undercooled oxide and metallic eutectic melts

โœ Scribed by Mingjun Li; Kosuke Nagashio; Kazuhiko Kuribayashi


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
340 KB
Volume
375-377
Category
Article
ISSN
0921-5093

No coin nor oath required. For personal study only.

โœฆ Synopsis


A high-speed video was employed to monitor the in situ recalescence of undercooled oxide Al 2 O 3 -36.8 at.% ZrO 2 and metallic Ni-18.7 at.% Sn eutectics that were processed on an aero-acoustic levitator and an electromagnetic levitator, respectively. For the oxide eutectic, the entire sample becomes brighter and brighter without any clear recalescence front during spontaneous crystallization. When the sample was seeded at desired undercoolings, crystallization started from the seeding point and then spread through the entire sample. Microstructures of the oxide solidified via both the spontaneous crystallization and external seeding consist of many independent eutectic colonies at the sample surface, indicating that copious nucleation takes place regardless of melt undercooling and solidification mode. For the metallic eutectics, two kinds of recalescence are visualized. The surface and cross sectional microstructures reveal that copious nucleation is also responsible for the formation of independent eutectic colonies distributing within the entire sample. It is not possible to measure the growth velocity of a single eutectic colony using optical techniques under the usual magnification. The conventional nucleation concept derived from single-phase alloys may not be applicable to the free solidification of the undercooled double-phase oxide and metallic eutectic systems.


๐Ÿ“œ SIMILAR VOLUMES


Solidification of highly undercooled Si
โœ C. Panofen; D.M. Herlach ๐Ÿ“‚ Article ๐Ÿ“… 2007 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 593 KB

We report growth velocity measurements of highly undercooled pure Si and Si-Ge melts (2.5 and 10.0 at.% Ge) processed by containerless electromagnetic levitation. The existence of two regimes of growth for pure Si can be confirmed: faceted growth at low undercoolings and dendritic growth at high und

Directional Solidification and Melting o
โœ J. N. Koster ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 360 KB

Eutectic gallium-indium is studied in a horizontal Bridgman furnace geometry. Differential temperature gradients are applied to solidify and melt the alloy while observing in-situ the interface morphology and the chemical segregation in the melt and in the solid as well. Upon cooling, a wedge-type i