๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature

โœ Scribed by J. B. Wang; K. Li; X. L. Zhong; Y. C. Zhou; X. S. Fang; C. C. Tang; Y. Bando


Book ID
107470495
Publisher
Springer-Verlag
Year
2009
Tongue
English
Weight
580 KB
Volume
4
Category
Article
ISSN
1931-7573

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Large critical-temperature depression in
โœ Akira Ono ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 342 KB

The compound Ba2YCu2.85Ga0.1506. 9 is annealed at various temperatures under high pressures of oxygen to study the dependence of superconducting transition temperature (T c) on annealing temperature. T~ is enhanced from 76 K to 92 K by annealing at 500ยฐC for 3 h and to 84 K by annealing at 990ยฐC for

Study on preventing segregation of erbiu
โœ Xifeng Qin; Ming Chen; Xuelin Wang; Gang Fu; Yi Liang; Shaomei Zhang ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 251 KB

The damage produced by implantation of Er ions of 400 keV at a fluence of 5 ร‚ 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after ann