The compound Ba2YCu2.85Ga0.1506. 9 is annealed at various temperatures under high pressures of oxygen to study the dependence of superconducting transition temperature (T c) on annealing temperature. T~ is enhanced from 76 K to 92 K by annealing at 500ยฐC for 3 h and to 84 K by annealing at 990ยฐC for
โฆ LIBER โฆ
Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature
โ Scribed by J. B. Wang; K. Li; X. L. Zhong; Y. C. Zhou; X. S. Fang; C. C. Tang; Y. Bando
- Book ID
- 107470495
- Publisher
- Springer-Verlag
- Year
- 2009
- Tongue
- English
- Weight
- 580 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1931-7573
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The damage produced by implantation of Er ions of 400 keV at a fluence of 5 ร 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after ann