We incorporate the quantum dot picture into analysis of light-matter coupling in GaN microcavities with InGaN quantum wells. We investigate quantitatively the transition from weak to strong coupling regime with the variation of the in-plane density of quantum dots, radiative recombination time of th
Confinement versus localization for quantum wells and quantum wires in a self-assembled structure
β Scribed by I. Rasnik; L.G.C. Rego; M.V. Marquezini; A.L.C. Triques; M.J.S.P. Brasil; J.A. Brum; M.A. Cotta
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 69 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0749-6036
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β¦ Synopsis
We investigate the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. The magnetoshift of the emission lines measured at different temperatures are analysed using a model where the average effect of the microroughness is represented by a Gaussian defect. We obtain a quantitative estimate of the exciton localization due to the microroughness. As the temperature increases the excitons are released from the weak localized defects. Time-resolved luminescence results corroborate this interpretation.
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