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Conductivity type conversion in ion-milled p-HgCdTe:As heterostructures grown by molecular beam epitaxy

✍ Scribed by Izhnin, I. I.; Dvoretsky, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Varavin, V. S.; Mynbaev, K. D.; Pociask, M.

Book ID
121495817
Publisher
American Institute of Physics
Year
2007
Tongue
English
Weight
339 KB
Volume
91
Category
Article
ISSN
0003-6951

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Strain relaxation in AlN/GaN heterostruc
Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between