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Conduction mechanism of TiN∕HfOx∕Pt resistive switching memory: A trap-assisted-tunneling model

✍ Scribed by Yu, Shimeng; Guan, Ximeng; Wong, H.-S. Philip

Book ID: 121303672
Publisher: American Institute of Physics
Year: 2011
Tongue: English
Weight: 808 KB
Volume: 99
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.3624472

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