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Conditions for single-crystal formation during bridgman growth

✍ Scribed by V. I. Shtanov

Book ID
110138275
Publisher
SP MAIK Nauka/Interperiodica
Year
2004
Tongue
English
Weight
109 KB
Volume
49
Category
Article
ISSN
1063-7745

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## Horizontal Bridgman Growth of GaAs Single Crystals I n order to meet requireinents for the preparation of low dislocation deiisity GaAs single crystals a horizontal Britlginan t.ypc apparatus was designed. Construction of the apparatus allows the estithlishtiient of enhanced teiiiperature stabi