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Computer modelling of polysiliconcontacted emitter bipolar transistors for VLSI circuits

✍ Scribed by Susan M. Bradley; J.G. Doherty

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
521 KB
Volume
18
Category
Article
ISSN
0026-2692

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Parameter extraction of a base-collector
Parameter extraction of a base-collector equivalent circuit model for SiGe heterojunction bipolar transistors
✍ Seonghearn Lee πŸ“‚ Article πŸ“… 2003 πŸ› John Wiley and Sons 🌐 English βš– 107 KB

## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation