Computer-Aided Design and VLSI Device Development

✍ Scribed by Kit Man Cham, Soo-Young Oh, Daeje Chin, John L. Moll (auth.)

• Publisher: Springer US
• Year: 1986
• Tongue: English
• Leaves: 316
• Series: The Springer International Series in Engineering and Computer Science 7
• Edition: 1
• Category: Library

✦ Synopsis

This book is concerned with the use of Computer-Aided Design (CAD) in the device and process development of Very-Large-Scale-Integrated Circuits (VLSI). The emphasis is in Metal-Oxide-Semiconductor (MOS) technology. State-of-the-art device and process development are presented. This book is intended as a reference for engineers involved in VLSI develop­ ment who have to solve many device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simula­ tion system, and also presents many case studies where the user applies the CAD tools in different situations. This book is also intended as a text or reference for graduate students in the field of integrated circuit fabrication. Major areas of device physics and processing are described and illustrated with Simulations. The material in this book is a result of several years of work on the implemen­ tation of the simulation system, the refinement of physical models in the simulation programs, and the application of the programs to many cases of device developments. The text began as publications in journals and con­ ference proceedings, as weil as lecture notes for a Hewlett-Packard internal CAD course. This book consists of two parts. It begins with an overview of the status of CAD in VLSI, which pointsout why CAD is essential in VLSI development. Part A presents the organization of the two-dimensional simulation system.

✦ Table of Contents

Front Matter....Pages i-xi
Overview....Pages 1-9
Front Matter....Pages 11-11
Introduction to Numerical Simulation System....Pages 13-21
Process Simulation....Pages 23-64
Device Simulation....Pages 65-111
FCAP2: Parasitic Capacitance/Resistance Simulator....Pages 113-119
Front Matter....Pages 121-121
Methodology in Computer-Aided Design for Process and Device Development....Pages 123-130
Basic Techniques in Simulations for Advanced Process Development....Pages 131-158
Drain-Induced Barrier Lowering In Short Channel Transistors....Pages 159-169
Transistor Design for Submicron CMOS Technology....Pages 171-197
The Surface Inversion Problem in Trench Isolated CMOS....Pages 199-216
Development of Isolation Structures for Applications in VLSI....Pages 217-237
A Study of LDD Device Structure Using 2-D Simulations....Pages 239-259
MOSFET Scaling by CADDET....Pages 261-282
Parasitics Extraction for VLSI Process Development....Pages 283-300
Back Matter....Pages 301-315

✦ Subjects

Circuits and Systems; Electrical Engineering