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Computed stress fields in GaAs during vertical Bridgman growth

✍ Scribed by William Rosch; Frederick Carlson

Book ID
107790660
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
532 KB
Volume
109
Category
Article
ISSN
0022-0248

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Forschungszentrum J01ich I Growth of GaAs crystals by the vertical Bridgman technique has several advantages over LEC --material with lower dislocation density, lower elastic stresses and higher homogeneity can be grown. Most importantly, it also promises lower production costs. However, the methodh