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Developments in vertical Bridgman growth of large diameter GaAs

✍ Scribed by K. Sonnenberg; E. Küssel

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
857 KB
Volume
10
Category
Article
ISSN
0961-1290

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✦ Synopsis

Forschungszentrum J01ich I Growth of GaAs crystals by the vertical Bridgman technique has several advantages over LEC --material with lower dislocation density, lower elastic stresses and higher homogeneity can be grown. Most importantly, it also promises lower production costs. However, the methodhas been hampered by a low single crystal yield due to poly growth and twin formation. During the last few years our group has developed the technical prerequisites to overcome this problem. In the first part of this report we shall present two new furnace concepts and some growth results. In the second part we will discuss the technical developments of crucibles.

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