Computational simulations of charge carrier kinetics in a-Si: H

✍ Scribed by Chr.M. Haffer; M. Kunst

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 718 KB
• Volume: 211
• Category: Article
• ISSN: 0009-2614
• DOI: 10.1016/0009-2614(93)85186-r

✦ Synopsis

Experimental results of contactless time-resolved photoconductivity measurements in intrinsic a-Si: H films are compared to numerically simulated results with an electron-hole recombination as the main decay channel. This simplistic model is extended stepwise by incorporating experimental features of increasing complexity in order to fit the experimental results. It appears possible to explain the experimental data by a model containing only one free parameter. This leads to the proposal of a value for the rate constant for the recombination of electrons and holes by a second-order reaction of 1 .O x 10V9 cm3 s-' as a satisfactory fit to the data.