Compression Mechanisms in Highly Anisotropic Semiconductors
β Scribed by H. C. Hsueh; J. Crain
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 186 KB
- Volume
- 211
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
It was shown previously that if compression of a powder is treated in an analogous manner to the compression of a nonporous solid, a plot of the transmitted pressure uersus the applied pressure should have a hysteresis area that is linear with respect to the maximally applied pressure if plastic def
In this work the application of photoacoustic technique (PA) for the study of recombination mechanisms in semiconductor substrates and heterostructures is briefly reviewed. A theoretical model which allows the investigation of nonradiative recombination time and surface recombination velocity was de