✦ LIBER ✦

Study of Nonradiative Recombination Mechanisms in Semiconductors by Photoacoustic Measurements

✍ Scribed by I. Riech; P. Díaz; E. Marín

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 79 KB
Volume: 220
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(200007)220:1<305::aid-pssb305>3.0.co;2-8

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✦ Synopsis

In this work the application of photoacoustic technique (PA) for the study of recombination mechanisms in semiconductor substrates and heterostructures is briefly reviewed. A theoretical model which allows the investigation of nonradiative recombination time and surface recombination velocity was developed. We present the experimental values of such parameters obtained by fitting the theoretical curves to the experimental PA phase data for SiN:H/Si, AlGaAs/GaAs and InGaAsSb/ GaSb single heterostructures.