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Comprehensive Study of Emitter-Ledge Thickness of InGaP/GaAs HBTs

โœ Scribed by Ssu-I Fu; Shiou-Ying Cheng; Tzu-Pin Chen; Po-Hsien Lai; Yan-Ying Tsai; Ching-Wen Hung; Chih-Hung Yen; Wen-Chau Liu

Book ID
114618482
Publisher
IEEE
Year
2006
Tongue
English
Weight
343 KB
Volume
53
Category
Article
ISSN
0018-9383

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Improved InGaP/GaAs/InGaP ฮด-doped double
Improved InGaP/GaAs/InGaP ฮด-doped double-HBT with InGaP passivation layer and effects of layer-thickness on device performance
โœ W.S. Lour; J.L. Hsieh; C.Y. Lia ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 316 KB

This paper reports on the fabrication and characterization of InGaP/GaAs/InGaP ฮด-doped double heterojunction bipolar transistors (ฮด-DHBTs) with an InGaP passivation layer. Effects of passivation layer thickness on the performance of the studied devices were investigated. Various passivation layer th