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Comprehension of the effects of gamma ray on luminescence intensity of GaN-based light-emitting diodes with multi-quantum well

✍ Scribed by Changshi Liu

Book ID
119882594
Publisher
SP MAIK Nauka/Interperiodica
Year
2012
Tongue
English
Weight
190 KB
Volume
113
Category
Article
ISSN
0030-400X

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Spectra and quantum efficiency h e of green LEDs based on heterostructures InGaN/AlGaN/GaN with multiple quantum wells were studied at currents J = 10 Β± Β±6 to 10 Β± Β±1 A. Minor differences in h e (of AE10% at J % 10 mA) are caused by sufficiently different distributions of effective charges in the sp