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Compositional changes of silicon carbide induced by nitrogen implantation

โœ Scribed by S. Miyagawa; K. Baba; M. Ikeyama; K. Saitoh; S. Nakao; Y. Miyagawa

Book ID
114168973
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
409 KB
Volume
127-128
Category
Article
ISSN
0168-583X

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## Abstract Czochralski (CZ) Si samples implanted with nitrogen, with doses 10^17^ ion/cm^2^ and 10^18^ ion/cm^2^, at 140 keV, were studied by means of Fourier transform infrared spectroscopy after annealing at 1130 ยฐC/5 h under different hydrostatic pressures, from 1 bar to 10.7 kbar. It has been