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Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

✍ Scribed by Kwangseok Han; Gil, J.; Seong-Sik Song; Jeonghu Han; Hyungcheol Shin; Choong-Ki Kim; Kwyro Lee


Book ID
117884077
Publisher
IEEE
Year
2005
Tongue
English
Weight
895 KB
Volume
40
Category
Article
ISSN
0018-9200

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## Abstract In this article, we demonstrate a miniaturized high‐linearity (IIP3 = 8 dBm at 4 GHz) 3–5‐GHz ultrawideband low‐noise amplifier (LNA) implemented in a standard 0.18‐μm CMOS technology. The inductive‐series peaking technique was used to enhance the gain and bandwidth performances of the