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Competition between internal and heavy doping gettering options in epi-silicon

โœ Scribed by C. Frigeri; E. Gombia; A. Motta


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
171 KB
Volume
9
Category
Article
ISSN
1369-8001

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Oxygen precipitation and improved intern
โœ Qiuyan Hao; Caichi Liu; Hongdi Zhang; Jianqiang Zhang; Shilong Sun ๐Ÿ“‚ Article ๐Ÿ“… 2006 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 155 KB

The behavior of oxygen precipitation and its induced defects in heavily As-doped silicon was investigated through annealing experiments. Comparison to similar investigations on heavily B-and Sb-doped silicon reveals the formation temperature of the oxygen precipitates dependence of dopant type. The