Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys
β Scribed by Dietrich, C P; Lange, M; Benndorf, G; Lenzner, J; Lorenz, M; Grundmann, M
- Book ID
- 120375418
- Publisher
- Institute of Physics
- Year
- 2010
- Tongue
- English
- Weight
- 685 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1367-2630
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π SIMILAR VOLUMES
The dressed-band approach is used to treat the interaction of a laser field with semiconductor GaAs-(Ga,Al)As quantum wells and quantum dots. We adopt the Kane model and a renormalized-mass approximation. We calculate the effects originated by the laser-dressing on exciton energies in quantum-wells
The properties of excitonic states in pseudomorphic, (100)- and (311)-oriented \(\mathrm{In}_{0.2} \mathrm{Gr}_{0}{ }_{8} \mathrm{As} / \mathrm{GaAs}\) quantum well (QW) structures are investigated. Strained QW's with different states of strain and segregation were grown by molecular beam epitaxy. N