98/01399 Comparison of two dynamic test
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Article
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1998
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Elsevier Science
โ 210 KB
is designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapour deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that with a conventional GaAs buffer layer and also that fabricated on GaA