98/01399 Comparison of two dynamic test methods for solar flat-plate collectors: Amer, E. H. et al. Energy Convers. Mgmt, 1998, 39, (3/4), 285–293

• Publisher: Elsevier Science
• Year: 1998
• Weight: 210 KB
• Volume: 39
• Category: Article
• ISSN: 0140-6701
• DOI: 10.1016/s0140-6701(98)97541-5

✦ Synopsis

is designed to obtain a high quality GaAs layer on Ge substrate by metalorganic chemical vapour deposition (MOCVD). Performance of a GaAs solar cell fabricated on Ge substrate with the buffer layer structure was compared with that with a conventional GaAs buffer layer and also that fabricated on GaAs substrate. A 23.18% (AMISG) conversion efficiency was successfully obtained for the cell fabricated on Ge substrate with the new buffer layer structure, while the cell fabricated on Ge substrate with the conventional GaAs buffer layer achieved 20.92%. Values of V,, and Js, for the cell fabricated on Ge substrate with the new buffer layer structure were approximately comparable to those of a 25.39% efficiency GaAs solar cell fabricated on GaAs substrate.