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Comparison of the microstructure and chemistry of GaN(0001) films grown using trimethylgallium and triethylgallium on AlN/SiC substrates

✍ Scribed by Ji-Soo Park; Zachary J. Reitmeier; Robert F. Davis


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
320 KB
Volume
2
Category
Article
ISSN
1862-6351

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Surface and defect microstructure of GaN
✍ Z.J. Reitmeier; S. Einfeldt; R.F. Davis; Xinyu Zhang; Xialong Fang; S. Mahajan πŸ“‚ Article πŸ“… 2010 πŸ› Elsevier Science 🌐 English βš– 875 KB

Hydrogen-etching of 6H-SiC(0001) substrates removed mechanical polishing damage and produced an array of parallel, unit cell high steps. The initial stage of AlN deposition on these etched substrates occurred via island nucleation, both on step edges and on terraces. Coalesced AlN films did not show