Comparison of resonant tunneling in AlGaAs/GaAs parabolic and diffusion modified quantum wells
β Scribed by Sudhira Panda; B. K. Panda; S. Fung
- Book ID
- 110638456
- Publisher
- Springer-Verlag
- Year
- 2003
- Tongue
- English
- Weight
- 94 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0304-4289
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π SIMILAR VOLUMES
Photoluminescence and electroreflectance measurements in Si Ξ΄-doped GaAs/Al 0.35 Ga 0.65 -As triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a Ξ΄-doping layer inserted between narrow a
Electron and hole tunneling transfer processes in asymmetric double quantum well structures are investigated by time-resolved picosecond photoluminescence. Change from nonresonant to resonant tunneling is achieved with a perpendicular electric field. Electron transfer times become considerably faste