𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Comparison of resonant tunneling in AlGaAs/GaAs parabolic and diffusion modified quantum wells

✍ Scribed by Sudhira Panda; B. K. Panda; S. Fung


Book ID
110638456
Publisher
Springer-Verlag
Year
2003
Tongue
English
Weight
94 KB
Volume
61
Category
Article
ISSN
0304-4289

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effect of ionized impurities on electron
✍ J.H. Park; S. Ozaki; N. Mori; C. Hamaguchi πŸ“‚ Article πŸ“… 1999 πŸ› Elsevier Science 🌐 English βš– 272 KB

Photoluminescence and electroreflectance measurements in Si Ξ΄-doped GaAs/Al 0.35 Ga 0.65 -As triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a Ξ΄-doping layer inserted between narrow a

Resonant and nonresonant tunneling in Ga
✍ M.G.W. Alexander; M. Nido; W.W. RΓΌhle; K. KΓΆhler πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 305 KB

Electron and hole tunneling transfer processes in asymmetric double quantum well structures are investigated by time-resolved picosecond photoluminescence. Change from nonresonant to resonant tunneling is achieved with a perpendicular electric field. Electron transfer times become considerably faste