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Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy

✍ Scribed by Levichev, S.; Volkova, N.S.; Gorshkov, A.P.; Zdoroveishev, A.V.; Vikhrova, O.V.; Utsyna, E.V.; Istomin, L.A.; Zvonkov, B.N.


Book ID
125463290
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
665 KB
Volume
147
Category
Article
ISSN
0022-2313

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