Comparison of negative tone resists NEB22 and UVN30 in e-beam lithography

✍ Scribed by A.J. van Dodewaard; W.S.M.M. Ketelaars; R.F.M. Roes; J.A.J. Kwinten; F.C.M.J.M. van Delft; A.J. van Run; A.K. van Langen-Suurling; J. Romijn

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 596 KB
• Volume: 53
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(00)00356-7

✦ Synopsis

The negative tone resists NEB22 and UVN30 have been studied for their contrast and resolution in e-beam lithography, as well as in 248 nm DUV lithography. Also, their etch resistances have been determined in 02, SF6/He and CHF3/O 2 plasmas in comparison with novolac resists. NEB22 shows a slightly higher resolution and higher contrasts and UVN30 shows a better PEB lattitude. Both resists show excellent etch resistances and can be exposed by a DUV stepper and, hence, are suitable for 'Mix-and-Match' technology. For both resists, processing conditions, which result in higher contrasts, also tend to result in poorer exposure lattitudes.