✍ Scribed by P.W.H. de Jager; B. Mertens; E. Munro; E. Cekan; G. Lammer; H. Vonach; H. Buschbeck; M. Zeininger; C. Horner; H. Löschner; G. Stengl; A.J. Bleeker
No coin nor oath required. For personal study only.
Coulomb interaction limits the beam current for a required resolution but it can be influenced by the layout of the optical system. Therefore it is necessary to obtain design information for future charged particle lithography tools. Monte Carlo simulations are an important tool in this design. Two of these programs, COUTRAC and BOERSCH, are compared with experimental data of an Ion Projection Lithography (IPL) set-up. The results of COUTRAC are in agreement with the measurements to within 19% in case of a uniform cross-over. With an aberrated cross-over the difference increases to 126 % near the axis since the experiment showed no increase of Coulomb interaction over the inner quarter of the exposure field while both Monte Carlo models show a monotone increase to the axis.
📜 SIMILAR VOLUMES