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Comparison of Irradiation- and Annealing-Induced Changes of the Intrinsic Emission Intensity in Electron-Bombarded Undeformed and Plastically Deformed GaAs

โœ Scribed by Glinchuk, K. D. ;Prokhorovich, A. V. ;Zayats, N. S.


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
222 KB
Volume
73
Category
Article
ISSN
0031-8965

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Effect of Fast Electron Irradiation and
โœ Dr. K. D. Glinchuk; V. I. Guroshev; A. V. Prokhorovich; N. S. Zayats ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 427 KB

Irradiation-induced 1.26 and 1.39 eV Emiwion Bands1) The effect of 2.2 MeV electron irradiation and subsequent annealings on the photoluminescence in zinc-doped p-type GaAs crystals is studied and analyzed. Rather strong emission bands peaked a t hv, (77 K ) near 1.26 eV (induced by electron irradi