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Comparison of heterojunction bipolar transistors in stripe and dot geometries

✍ Scribed by William Liu

Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
501 KB
Volume
36
Category
Article
ISSN
0038-1101

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## Abstract This paper describes the DC and small‐signal performance of two InGaP/GaAs heterojunction bipolar transistors (HBTs) that have the same chip size. This is done in order to compare emitter–base designs using the TCAD ATLAS device simulator. The HBT devices analyzed have the same cutoff a