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Comparison of gate and drain current detection of hydrogen at room temperature with AlGaNâGaN high electron mobility transistors

✍ Scribed by Wang, Hung-Ta; Kang, B. S.; Ren, F.; Fitch, R. C.; Gillespie, J. K.; Moser, N.; Jessen, G.; Jenkins, T.; Dettmer, R.; Via, D.; Crespo, A.; Gila, B. P.; Abernathy, C. R.; Pearton, S. J.

Book ID: 120005601
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 530 KB
Volume: 87
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.2117617

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