Comparison of experimental and computed results on arsenic- and phosphorus-doped polysilicon emitter bipolar transistors

✍ Scribed by Ashburn, P.; Roulston, D.J.; Selvakumar, C.R.

• Book ID: 114596012
• Publisher: IEEE
• Year: 1987
• Tongue: English
• Weight: 1005 KB
• Volume: 34
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/t-ed.1987.23090