## Abstract A Raman scattering system devoted to high temperatures is presented. It is based on a pulsed system to remove thermal emission with retaining chargeβcoupled device (CCD) detection. Two types of optical gating are used: a Pockels switch or an intensified CCD (ICCD), combining in this cas
β¦ LIBER β¦
Comparison of Detection Schemes for High-Temperature Raman Spectroscopy
β Scribed by Iida, Yasuo; Furukawa, Masamichi; Morikawa, Hisashi
- Book ID
- 115363256
- Publisher
- Society for Applied Spectroscopy
- Year
- 1997
- Tongue
- English
- Weight
- 141 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0003-7028
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
High temperatures and Raman scattering t
β
P. Simon; B. Moulin; E. Buixaderas; N. Raimboux; E. Herault; B. Chazallon; H. Ca
π
Article
π
2003
π
John Wiley and Sons
π
English
β 282 KB
High temperature Raman spectroscopy of t
β
Andreja GajoviΔ; Ivica FriΕ‘ΔiΔ; Milivoj Plodinec; Damir IvekoviΔ
π
Article
π
2009
π
Elsevier Science
π
English
β 894 KB
A Simple Very High Temperature Cell For
β
Hirschfeld, T.; Mueller, W.; Klainer, S.
π
Article
π
1975
π
Society for Applied Spectroscopy
π
English
β 295 KB
High-temperature and pressure Raman spec
β
En-Ping Huang; Eugene Huang; Shu-Cheng Yu; Yen-Hua Chen; Jiann-Shing Lee; Jiann-
π
Article
π
2010
π
Elsevier Science
π
English
β 277 KB
High temperature Raman spectroscopy stud
β
Z. H. Ni; H. M. Fan; X. F. Fan; H. M. Wang; Z. Zheng; Y. P. Feng; Y. H. Wu; Z. X
π
Article
π
2007
π
John Wiley and Sons
π
English
β 386 KB
## Abstract High temperature Raman experiments were carried out on carbon nanowalls (CNWs). The intensity of the defectβinduced D mode decreased significantly after the sample was heated in air ambient. The Raman intensity ratio of D mode and G mode, __I__~D~/__I__~G~, changed from 2.3 at room temp
High temperature Raman spectroscopy of s
β
A. TurkoviΔ; D.L. Fox; J.F. Scott; S. Geller; G.F. Ruse
π
Article
π
1977
π
Elsevier Science
π
English
β 381 KB