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Comparison of degradation modes in 1.2–2.1 nm thick SiO2 oxides submitted to uniform and hot carrier injections in NMOSFETS

✍ Scribed by Didier Goguenheim; Céline Trapes; Alain Bravaix

Book ID: 117146502
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 378 KB
Volume: 322
Category: Article
ISSN: 0022-3093
DOI: 10.1016/s0022-3093(03)00200-x

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